Datasheet4U Logo Datasheet4U.com

IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGP4062DPBF, a member of the IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • C.
  • Low VCE (ON) Trench IGBT Technology.
  • Low switching losses.
  • Maximum Junction temperature 175 °C.
  • 5 μS short circuit SOA.
  • Square RBSOA G.
  • 100% of the parts tested for ILM .
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra fast soft Recovery Co-Pak Diode E n-channel.
  • Tight parameter distribution.
  • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.65.

📥 Download Datasheet

Datasheet preview – IRGP4062DPBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM  • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode E n-channel • Tight parameter distribution • Lead Free Package C VCES = 600V IC = 24A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
Published: |