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IRGP4065PBF - PDP TRENCH IGBT

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Key Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package www.DataSheet4U.com PD - 97208 Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c TJ max C 300 1.75 205 150 C E C G V V A °C G E n-channel G Gate C Collector TO-247AC E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.