Datasheet4U Logo Datasheet4U.com

IRGIB10B60KD1P - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10μs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature Rated at 175°C.
  • Lead-Free.
  • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits.
  • Benchmark Efficiency for Motor C.

📥 Download Datasheet

Datasheet preview – IRGIB10B60KD1P

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified C G E n-channel VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.7V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
Published: |