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IRGBC40M - INSULATED GATE BIPOLAR TRANSISTOR

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Short circuit rated - 10µs @ 125°C, VGE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 24A n-channel.

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www.DataSheet4U.com Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
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