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IRGBC40K-S - UltraFast Fast IGBT

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Short circuit rated - 10µs @ 125°C, VGE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C G E n-channel VCES = 600V VCE(sat) ≤ 3.2V @VGE = 15V, IC = 25A.

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Full PDF Text Transcription

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PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C G E n-channel VCES = 600V VCE(sat) ≤ 3.2V @VGE = 15V, IC = 25A Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
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