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IRGBC40F - INSULATED GATE BIPOLAR TRANSISTOR

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 27A n-channel.

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www.DataSheet4U.com Previous Datasheet Index Next Data Sheet PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 27A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
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