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IRGB4715DPbF - Insulated Gate Bipolar Transistor

Download the IRGB4715DPbF datasheet PDF (IRGS4715DPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for insulated gate bipolar transistor.

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C G E n-channel G CE IRGS4715DPbF  D2‐Pak  E C G IRGB4715DPbF  TO‐220AB  G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

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Note: The manufacturer provides a single datasheet file (IRGS4715DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 8A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.
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