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IRG4CC71KB - IGBT Die

Description

Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 1.7V Max.

600V Min.

3.0V Min., 6.5V Max.

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www.DataSheet4U.com PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G E 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 1.7V Max. 600V Min. 3.0V Min., 6.5V Max. 300 µA Max. ± 1.1 µA Max.
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