Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.3V Max.
600V Min.
3.0V Min., 6.0V Max.
| Part number | IRG4CC50WB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 29.73 KB |
| Description | IGBT Die |
| Datasheet |
 IRG4CC50WB Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRG4BC20F | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRG4BC20FD | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRG4BC20FD-S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRG4BC20K | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| IRG4BC20K-S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
| Part Number | Description |
|---|---|
| IRG4CC50UB | IGBT Die |
| IRG4CC20FB | IGBT Die |
| IRG4CC71KB | IGBT Die |
| IRG4CH40SB | IGBT Die |
| IRG41BC10UDPBF | Insulated Gate Bipolar Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
