Datasheet4U Logo Datasheet4U.com

IRG4CC50UB - IGBT Die

Description

2.0V Max.

600V Min.

3.0V Min., 6.0V Max.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4CC50WB IGBT Die
IRG4CC20FB IGBT Die
IRG4CC71KB IGBT Die
IRG4CH40SB IGBT Die
IRG41BC10UDPBF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.0V Max. 600V Min. 3.0V Min., 6.0V Max. 250µA Max. ± 1.1µA Max. IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni / V-Ag ( 1kA-2kA-.2.
Published: |