Datasheet4U Logo Datasheet4U.com

IRG4BC40WSPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction).

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95788B INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40WSPbF IRG4BC40WLPbF C Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Lead-Free VCES = 600V G E VCE(on) typ. = 2.
Published: |