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PD - 95861
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WS IRG4BC40WL
C
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
VCES = 600V
G E
VCE(on) typ. = 2.
IRG4BC40WL Datasheet
