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IRG4BC40UPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs VCES = 600V VCE(on) typ. = 1.