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PD - 95613
IRG4BC15UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Benefits
Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegative bias gate drive not necessary • For Low EMI designs- requires little or no snubbing • Single Package switch for bridge circuit applications • Compatible with high voltage Gate Driver IC's • Allows simpler gate drive
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