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IRG4BC15UDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching.
  • IGBT Co-packaged with ultra-soft-recovery antiparallel diode.
  • Industry standard TO-220AB package.
  • Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial.

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PD - 95613 IRG4BC15UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package • Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial Applications • High noise immune "Positive Only" gate driveNegative bias gate drive not necessary • For Low EMI designs- requires little or no snubbing • Single Package switch for bridge circuit applications • Compatible with high voltage Gate Driver IC's • Allows simpler gate drive www.DataSheet4U.