Datasheet4U Logo Datasheet4U.com

IRG4BC15UD - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching.
  • IGBT Co-packaged with ultra-soft-recovery antiparallel diode.
  • Industry standard TO-220AB package VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits.
  • Best Value for Appliance and Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC15UD-L (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-LPBF (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-S (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-SPBF (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UDPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94082A IRG4BC15UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.