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IRG4BC15UD-LPBF - (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching.
  • IGBT Co-packaged with ultra-soft-recovery antiparallel diode.
  • Industry standard D2Pak & TO-262 packages.
  • Lead-Free G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Appliance and Industrial.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC15UD-L (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-S (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-SPBF (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UDPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 95781 IRG4BC15UD-SPbF IRG4BC15UD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak & TO-262 packages • Lead-Free G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.