Datasheet4U Logo Datasheet4U.com

IRG4BC15MDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Rugged: 10µsec short circuit capable at VGS = 15V.
  • Low VCE(on) for 4 to 10kHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG4BC15MD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-L (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-LPBF (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-S (IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Circuit Rated Fast IGBT VCES = 600V Benefits • Industry standard TO-220AB package • Lead-Free G E VCE(on) typ. = 1.88V @VGE = 15V, IC = 8.