Click to expand full text
PD - 96246
IRF8852PbF
l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free
HEXFET® Power MOSFET
VDSS 25V
RDS(on) max 11.3m @VGS = 10V 15.4m @VGS = 4.5V
: :
Id 7.8A 6.2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the
! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB
' & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB!
designer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF8852PBF Datasheet
