IRF8010L
.Data Sheet.in
- 94573
SMPS MOSFET
Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l
HEXFET® Power MOSFET
IRF8010S IRF8010L
80A 15mΩ
VDSS
100V
RDS(on) max
D2Pak IRF8010S
TO-262 IRF8010L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
Max.
80 57 320 260 1.8 ± 20 i
Units
A W W/°C V V/ns °C c
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e
16 -55 to + 175
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA...
