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IRF7905PBF - HEXFET Power MOSFET

Features

  • 2 1.4 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 50 Fig 16. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 50 ID = 7.8A 40 ID = 8.9A 40 30 TJ = 125°C 30 20 TJ = 25°C TJ = 125°C 20 10 2 4 6 8 10 10 2 4 6 TJ = 25°C 8 10 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-So.

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www.DataSheet4U.com PD - 97065A IRF7905PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V Q1 21.8m:@VGS = 10V Q2 17.1m:@VGS = 10V  '  RDS(on) max ID 7.8A 8.9A   6   *   6   *  '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 7.8 6.
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