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IRF7904UPBF - HEXFET Power MOSFET

Features

  • .2 0.4 0.6 0.8 1.0 1.2 1.4 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 40 VSD, Source-to-Drain Voltage (V) Fig 16. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 25 ID = 7.6A 35 ID = 11A 20 30 25 15 TJ = 125°C 20 TJ = 125°C 10 15 TJ = 25°C 5 2.0 4.0 6.0 8.0 10.0 10 2.0 4.0 6.0 TJ = 25°C 8.0 10.0 VGS.

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www.DataSheet4U.com PD - 96084A IRF7904UPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box VDSS 30V Q1 16.2m:@VGS = 10V Q2 10.8m:@VGS = 10V RDS(on) max ID 7.6A 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
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