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IRF7907PBF - Power MOSFET

Features

  • Current (A) ISD, Reverse Drain Current (A) 10.0 TJ = 150°C TJ = 150°C 10.0 1.0 1.0 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 40 Fig 16. Typical Source-Drain Diode Forward Voltage ( Ω) RDS (on), Drain-to -Source On Resistance m 40 ID = 8.8A ID = 11A 30.

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Full PDF Text Transcription

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PD - 97066A IRF7907PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V Q1 16.4m:@VGS = 10V Q2 11.8m:@VGS = 10V RDS(on) max ID 9.1A 11A   6   *   6   *  '   '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q1 Max. 30 ± 20 9.1 7.3 76 2.
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