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PD- 96151
IRF7752GPbF
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Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
30V
RDS(on) max
0.030@VGS = 10V 0.036@VGS = 4.5V
ID
4.6A 3.9A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
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with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the standard SO-8.
IRF7752GPBF Datasheet
