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PD-96144A
IRF7750GPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS = -20V RDS(on) = 0.030Ω
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer
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with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF7750GPBF Datasheet
