Datasheet4U Logo Datasheet4U.com

IRF7752 - Power MOSFET

Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

📁 Similar Datasheet

  • IRF7704TRPBF - Dual P-Channel MOSFET (VBsemi)
  • IRF7769L1 - Power MOSFET (Infineon)
  • IRF7769L1TRPbF - Power MOSFET (Infineon)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD -94030A IRF7752 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel VDSS 30V RDS(on) max 0.030@VGS = 10V 0.036@VGS = 4.5V ID 4.6A 3.9A Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8.
Published: |