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IRF6795MTRPbF - Power MOSFET

Download the IRF6795MTRPbF datasheet PDF (IRF6795MPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

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Note: The manufacturer provides a single datasheet file (IRF6795MPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by International Rectifier

Full PDF Text Transcription

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PD - 97321C IRF6795MPbF IRF6795MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.4mΩ@ 10V 2.4mΩ@ 4.5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  Qg tot 35nC Qgd 10nC Qgs2 4.8nC Qrr 34nC Qoss Vgs(th) 27nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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