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IRF6798MPBF - HEXFET Power MOSFET plus Schottky Diode

Download the IRF6798MPBF datasheet PDF. This datasheet also covers the IRF6798MTRPBF variant, as both devices belong to the same hexfet power mosfet plus schottky diode family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • MITED BY RDS(on) 100µsec 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1msec 10 10msec DC 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 1 0.1 TA = 25°C TJ = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6798MTRPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6798MTRPBF HEXFET Power MOSFET plus Schottky Diode
IRF6794MPbF Power MOSFET
IRF6794MTRPbF Power MOSFET
IRF6795MPbF Power MOSFET
IRF6795MTRPbF Power MOSFET

Full PDF Text Transcription

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HEXFET® Power MOSFET plus Schottky Diode ‚ RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 0.95mΩ@ 10V 1.6mΩ@ 4.5V l Low Profile (<0.7 mm) Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Dual Sided Cooling Compatible  l Low Package Inductance 50nC 16nC 6.8nC 64nC 38nC 1.8V l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested DirectFET ™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l IRF6798MPbF IRF6798MTRPbF www.DataSheet4U.
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