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IRF6797MTRPbF - HEXFET Power MOSFET plus Schottky Diode

Download the IRF6797MTRPbF datasheet PDF. This datasheet also covers the IRF6797MPbF variant, as both devices belong to the same hexfet power mosfet plus schottky diode family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRPbF.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6797MPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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