Datasheet Details
| Part number | IRF6729MPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 262.97 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6729MPBF Datasheet
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Description
The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ent (A) 100 100 10msec 10 DC 1 100µsec 1msec 10 T J = 150°C 1 T J = 25°C T J = -40°C VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) TA = 25°C TJ = 150°C Single Pulse 0.1 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 200 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 2.4 ID, Drain Current (A) 150 2.2 2.0 ID = 10mA 1.8 100 50 1.6 0 25 50 75 100.