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IRF6637TRPBF - Power MOSFET

Download the IRF6637TRPBF datasheet PDF (IRF6637PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 160 Fig.

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Note: The manufacturer provides a single datasheet file (IRF6637PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97088 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6637PbF IRF6637TRPbF RDS(on) RDS(on) Qoss 9.9nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qgs2 1.0nC Qrr 20nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.
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