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IRF6637PBF - Power MOSFET

Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 160 Fig.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6637 DirectFET Power MOSFET
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Full PDF Text Transcription

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PD - 97088 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6637PbF IRF6637TRPbF RDS(on) RDS(on) Qoss 9.9nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qgs2 1.0nC Qrr 20nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.
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