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IRF6626TRPbF - DirectFET Power MOSFET

Download the IRF6626TRPbF datasheet PDF (IRF6626PbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for directfet power mosfet.

Description

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • (on) 100µsec 10 1msec 10msec 1 0.1 Ta = 25°C Tj = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 ID = 50µA 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Threshold Voltage vs. Temperature ID TOP 5.6A 8.4A BOTTOM 13A EAS , Single Pulse Avalanche Energy (mJ) 40 20 www. irf. com 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 14. Maximum Av.

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Note: The manufacturer provides a single datasheet file (IRF6626PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V ST DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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