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IRF6623PBF - HEXFET Power MOSFET

Download the IRF6623PBF datasheet PDF (IRF6623TRPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Description

The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • d(off) tf Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform www. irf. com 5 IRF6623PbF D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • - www. datasheet4u. com + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6623TRPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by International Rectifier

Full PDF Text Transcription

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PD - 97085 IRF6623PbF IRF6623TRPbF RoHS Compliant ‰ Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs www.datasheet4u.com l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible ‰ l Compatible with existing Surface Mount Techniques ‰ l l DirectFET™ Power MOSFET Š VDSS 20V RDS(on) max 5.7mΩ@VGS = 10V 9.7mΩ@VGS = 4.5V Qg(typ.) 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
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