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IR2113E6 - HIGH AND LOW SIDE DRIVER

Description

The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

  • n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs Product Summary.

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Full PDF Text Transcription

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PD-91882A IR2113E6 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs Product Summary VOFFSET 600V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120ns & 94ns Delay Matching 20ns Description The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
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