N0072S Key Features
- Low Noise: 2.0 nV/√Hz Typical
- Typical Input Capacitance: 6.5pF
- Typical Breakdown Voltage: -45V
- Small Die: 467um X 467um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
- Part: N0072S
- Description: Process Geometry
- Manufacturer: InterFET
- Size: 355.62 KB
Related InterFET Datasheets
| Part Number | Description |
|---|---|
| N0072L | Process Geometry |
| N0001H | Process Geometry |
| N0014EU | Process Geometry |
| N0014L | Process Geometry |
| N0016H | Process Geometry |