N0032H Key Features
- Low Input Capacitance: 6.0pF Typical
- Low Gate Leakage: 10pA Typical
- High Breakdown Voltage: -60V Typical
- Small Die: 416um X 416um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
- Part: N0032H
- Description: Process Geometry
- Manufacturer: InterFET
- Size: 357.05 KB
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| Part Number | Description |
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| N0016H | Process Geometry |