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IS61LF25636A - 256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

Description

high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

The IS61LF/ VF25636A is organized as 262,144 words by 36 bits.

Features

  • Internal self-timed write cycle.
  • Individual Byte Write Control and Global Write.
  • Clock controlled, registered address, data and control.
  • Burst sequence control using MODE input.
  • Three chip enable option for simple depth expansion and address pipelining.
  • Common data inputs and data outputs.
  • Auto Power-down during deselect.
  • Single cycle deselect.
  • Snooze MODE for reduced-power standby.
  • JTAG Boundary Scan for.

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📁 Similar Datasheet

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IS61LF25618EC SYNCHRONOUS FLOW-THROUGH SRAM ISSI
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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LF51218A 256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6432A SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LF6436A SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61LP6432A 64K x 32 or 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61LP6432A 64K x 32- 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM

Full PDF Text Transcription

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IS61LF25636A IS61LF51218A IS61VF25636A IS61VF51218A www.DataSheet4U.com ISSI MAY 2005 ® 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expansion and address pipelining • Common data inputs and data outputs • Auto Power-down during deselect • Single cycle deselect • Snooze MODE for reduced-power standby • JTAG Boundary Scan for PBGA package • Power Supply LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5% VF: VDD 2.5V + 5%, VDDQ 2.
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