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IS61LF25618EC - SYNCHRONOUS FLOW-THROUGH SRAM

Download the IS61LF25618EC datasheet PDF. This datasheet also covers the IS61LF12836EC variant, as both devices belong to the same synchronous flow-through sram family and are provided as variant models within a single manufacturer datasheet.

Description

APRIL 2017 Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Co

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Note: The manufacturer provides a single datasheet file (IS61LF12836EC-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61LF25636A 256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM Integrated Silicon Solution
IS61LF51218A 256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM Integrated Silicon Solution
IS61LF6432A SYNCHRONOUS FLOW-THROUGH STATIC RAM Integrated Silicon Solution
IS61LF6436A SYNCHRONOUS FLOW-THROUGH STATIC RAM Integrated Silicon Solution
IS61LP6432A 64K x 32 or 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LF25618A (IS6xxFxxxxxA) Synchronous Flow-through Static RAM
IS61LF25632 (IS61LF25632 / IS61LF25636 / IS61LF51218) 256Kx32 Synchronous Flow-through Static RAM
IS61LF25636 (IS61LF25632 / IS61LF25636 / IS61LF51218) 256Kx32 Synchronous Flow-through Static RAM
IS61LF25672A (IS61xFxxxxxA) Synchronous Flow-through Static RAM
IS61LF204836B 2M x 36 / 4M x 18 / 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

Full PDF Text Transcription

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IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES DESCRIPTION APRIL 2017  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs and data outputs  Auto Power-down during deselect The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF/VF12836EC are organized as 131,072 words by 36bits.
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