IS45S81600E - 128Mb SYNCHRONOUS DRAM

Datasheet Summary

Description

A0-A11 A0-A9 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Dat

Features

Clock frequency: 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.3V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self R.

Integrated Silicon Solution

📥 Download Datasheet

Datasheet Details

Part number	IS45S81600E
Manufacturer	Integrated Silicon Solution
File Size	811.29 KB
Description	128Mb SYNCHRONOUS DRAM
Datasheet	IS45S81600E Datasheet
Additional preview pages of the IS45S81600E datasheet.

📁 Similar Datasheet

IS45S81600F - 128Mb SYNCHRONOUS DRAM (ISSI)
IS45S83200G - 256Mb SYNCHRONOUS DRAM (ISSI)
IS45S83200J - 256Mb SYNCHRONOUS DRAM (ISSI)
IS45S83200L - 256Mb SYNCHRONOUS DRAM (ISSI)
IS45S86400D - 512Mb SDRAM (ISSI)
IS45S86400F - 512Mb SDRAM (ISSI)
IS45S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM (ISSI)
IS45S16100H - 16Mb SYNCHRONOUS DYNAMIC RAM (ISSI)
IS45S16160G - 256Mb SYNCHRONOUS DRAM (ISSI)
IS45S16160J - 256Mb SYNCHRONOUS DRAM (ISSI)

Other Datasheets by Integrated Silicon Solution

IS45S83200C - 256 Mb Single Data Rate Synchronous DRAM
IS45S83200D - 256-MBIT SYNCHRONOUS DRAM
IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160C - 256 Mb Single Data Rate Synchronous DRAM
IS45S16160D - 256-MBIT SYNCHRONOUS DRAM
IS45S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM
IS45S16400C1 - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Full PDF Text Transcription

Click to expand full text

IS45S81600E IS45S16800E 1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS45S81600E Vdd Vddq 3.3V 3.3V IS45S16800E 3.3V 3.

Published: Jun 18, 2015 |