IS45S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM

Datasheet Summary

Description

A0-A12 A0-A9, A11 BA0, BA1 DQ0 to DQ7 CLK CKE CS RAS CAS Row Address Input Column Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data I

Features

Clock frequency: 166, 143, 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply Vdd Vddq IS42/45S16320B 3.3V 3.3V IS42S86400B.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refres.

Integrated Silicon Solution

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Datasheet Details

Part number	IS45S16320B
Manufacturer	Integrated Silicon Solution
File Size	920.38 KB
Description	32M x 16 512Mb SYNCHRONOUS DRAM
Datasheet	IS45S16320B Datasheet
Additional preview pages of the IS45S16320B datasheet.

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Full PDF Text Transcription

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IS42S86400B IS42S16320B, IS45S16320B www.DataSheet4U.com 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply Vdd Vddq IS42/45S16320B 3.3V 3.

Published: Apr 30, 2010 |