Datasheet4U Logo Datasheet4U.com

IS41LV16400 - 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

General Description

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

Key Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval: 4,096 cycles / 64 ms.
  • Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Low Standby power dissipation:.
  • 1.8mW(max) CMOS Input Level.
  • Single power supply: 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Extended Temperature Range -30oC to 85oC.
  • Industrail Temperature Ra.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41LV16400 4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: 4,096 cycles / 64 ms • Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Low Standby power dissipation: – 1.8mW(max) CMOS Input Level • Single power supply: 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Extended Temperature Range -30oC to 85oC • Industrail Temperature Range -40 C to 85 C o o www.DataSheet4U.com ISSI ® NOVEMBER 1999 DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode.