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ITCH36015E2 - RF Power LDMOS FET

Description

The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz ITCH36015E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 120 mA，Pulse Width =20us, Duty Cy

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS +65 Vdc VGS -10 to +10 Vdc 1/5 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH36015E2 Preli.

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Datasheet Details

Part number ITCH36015E2
Manufacturer Innogration
File Size 931.12 KB
Description RF Power LDMOS FET
Datasheet download datasheet ITCH36015E2 Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH36015E2 Preliminary Datasheet V1.1 700MHz-3600MHz, 20W, 28V RF Power LDMOS FETs Description The ITCH36015E2 is a 20-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 3600 MHz ITCH36015E2  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 120 mA，Pulse Width =20us, Duty Cycle =10%. Frequency GMAX P_1dB P_3dB ηD (MHz) (dB) (dBm) (dBm) (%) Pavg=33dBm WCDMA Signal(1) Gp ηD ACPR_5M (dB) (%) (dBc) 869 22.9 43.7 44.2 64.1 22.6 21.6 -37.1 881.5 22.9 43.4 44.0 65.7 22.5 22.2 -38.8 894 22.4 43.2 43.7 67.2 22.2 22.9 -39.
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