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ITCH09080GX - High Power RF LDMOS FET

Description

The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical Cl

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage.

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Datasheet Details

Part number ITCH09080GX
Manufacturer Innogration
File Size 547.48 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH09080GX Datasheet

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 80W, 28V High Power RF LDMOS FETs Description The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: ITCH09080GX Product Datasheet V1.0 ITCH09080GX ď‚·Typical Class AB Performance (On Innogration fixture with device soldered): VDD = 28 Volts,Vgs=3.02V, IDQ = 450 mA, Pulse CW, Pulse Width =20us, Duty Cycle =10%.
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