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Innogration (Suzhou) Co., Ltd.
Document Number: ITBH09260B Product Datasheet V1.0
700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs
Description
The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09260B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1200 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB)
P-1dB (dBm)
D@P-1 (%)
P-3dB (dBm)
D@P-3 (%)
875 MHz
19
54
55 54.
ITBH09260B2E Datasheet
