Click to expand full text
Innogration (Suzhou) Co., Ltd.
Document Number: ITBH09150B Product Datasheet V2.0
700MHz-1000MHz, 150W, 28V High Power RF LDMOS FETs
Description
The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09150B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB)
P-1dB (dBm)
D@P-1 (%)
P-3dB (dBm)
D@P-3 (%)
960 MHz
20.5
51.9
62.5
53
67.
ITBH09150B2 Datasheet
