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ITBH09200B2E - High Power RF LDMOS FET

Download the ITBH09200B2E datasheet PDF. This datasheet also covers the ITBH09200B2 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typical Sing

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operati.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITBH09200B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITBH09200B2E
Manufacturer Innogration
File Size 974.16 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITBH09200B2E Datasheet

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Other Datasheets by Innogration

Part Number Description
ITBH09200B2 High Power RF LDMOS FET
ITBH09260B2 High Power RF LDMOS FET
ITBH09260B2E High Power RF LDMOS FET
ITBH09150B2 High Power RF LDMOS FET
ITBH09150B2E High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
Innogration (Suzhou) Co., Ltd. Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs Description The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2 Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gp (dB) D (%) ACPR5M (dBc) ACPR10M (dBc) 920 MHz 19.9 26.4 -38.5 -55.4 960 MHz 20.3 28.8 -39.2 -56.4 875 MHz 19.7 26.
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