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SPD30P06PG - Power Transistor

Download the SPD30P06PG datasheet PDF. This datasheet also covers the SPD30P06P variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
  • 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPD30P06P_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for SPD30P06PG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD30P06PG. For precise diagrams, and layout, please refer to the original PDF.

SPD30P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source...

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nche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.