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SPD30P06P - Power Transistor

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A.
  • 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed d.

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Full PDF Text Transcription for SPD30P06P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD30P06P. For precise diagrams, and layout, please refer to the original PDF.

SPD30P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source...

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nche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.