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SPD30P06P - P-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for SPD30P06P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD30P06P. For precise diagrams, and layout, please refer to the original PDF.

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tes...

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V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.2 ℃/W SPD30P06P isc website：www.iscsemi.

📁 Similar Datasheet

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Infineon Technologies Logo SPD30P06P Power Transistor Infineon Technologies
Infineon Logo SPD30P06PG Power Transistor Infineon
VBsemi Logo SPD30P06PG P-Channel MOSFET VBsemi

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