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PTFA082201E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 50 40 30 20 10 0 30 35 40 45 50 -30 -35 -40 -45 Features.

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Datasheet Details

Part number PTFA082201E
Manufacturer Infineon
File Size 372.95 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA082201E Datasheet

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Full PDF Text Transcription

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PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.
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